SEMPEL - Semiconductor materials for power electronics

The transition to electrically driven transport and focus on sustainable energy sources places increasind demands on handling of high electrical powers with advanced and effective electronics. New so-called wide-bandgap semiconductors such as gallium nitride (GaN) have potentials to give a substantial loss reduction in power electronics. To compete on the market GaN must be grown as thin films on cheap and stable substrates. The primary industrial partner in the project, Topsil Semiconductor Materials A/S, has a significant share of the global market for silicon (Si) for power electronics. The project aims at using Si as a platform for the development of new highly efficient and reliable Si-GaN-based materials for power electronics.

The project includes the following main tasks:

1. Growth of GaN on Si wafers by two techniques, MBE and MOCVD. New optimized buffer layers minimizing the creation of interface defects will be developed.
2. Characterization and design of defect structures. Process steps that can control the evolvement of defects their spatial distribution will be developed.
3. Fabrication of GaN test components. Active GaN components will be produced in order to test electrical properties of the materials.
4. Design and test of GaN-based electrical systems. GaN/Si-based materials have inherently high defect densities. Accelerated tests mthods for GaN components wil be developed.